Sub-category 13.3
HBM Stacking & TSV (Through-Silicon Via)
How HBM goes from individual DRAM die to a 12-high stack with thousands of TSVs. Driven by hybrid bonding adoption.
Players
Players: SK Hynix 000660.KS, Samsung 005930.KS, Micron MU, BE Semiconductor (bonders) BESI.AS, ASMPT (bonders) 0522.HK, Hanmi Semiconductor (TC bonders) 042700.KS, Kulicke & Soffa KLIC
Analysis coming soon — this page is scaffolding for deeper research into hbm stacking & tsv (through-silicon via).